mar-02-2001 1 bas 16-02l 1 2 silicon switching diode preliminary data for high-speed switching application type marking pin configuration package bas 16-02l a6 1 = c 2 = a - tslp-2 maximum ratings parameter symbol value unit diode reverse voltage v r 75 v peak reverse voltage v rm 85 forward current i f 200 ma surge forward current, t = 1 s i fs 2.5 a total power dissipation t s = tbd p tot 250 junction temperature t j 150 c storage temperature t stg -65 ... 150 thermal resistance parameter symbol value unit junction - ambient- r thja tbd
mar-02-2001 2 bas 16-02l electrical characteristics at t a = 25c, unless otherwise specified parameter symbol values unit min. typ. max. dc characteristics breakdown voltage i (br) = 100 a v (br) - - - reverse current v r = 70 v v r = 25 v, t a = 150 c v r = 75 v, t a = 150 c i r - - - - - - 1 30 50 a forward voltage i f = 1 ma i f = 10 ma i f = 50 ma i f = 150 ma v f - - - - - - - - 715 855 1000 1250 mv ac characteristics diode capacitance v r = 0 v, f = 1 mhz c t - - 2 pf reverse recovery time i f = 10 ma, i r = 10 ma, i r = 1 ma, r l = 100 t rr - - 6 ns test circuit for reverse recovery time ehn00017 f d.u.t. oscillograph puls generator: t p = 100ns, d = 0.005, t r = 0.6ns, r i = 50 oscillograph: r = 50 , t r = 0.35ns, c 1pf
mar-02-2001 3 bas 16-02l reverse current i r = ( t a ) v r = parameter 10 10 10 0 50 100 150 bas 16 ehb00022 na t a r c 10 10 5 4 3 2 1 5 5 5 25 v 70 v max. = 70 v r v typ. forward voltage v f = ( t a ) i f = parameter 0 0.5 1.0 0 50 100 150 bas 16 ehb00025 v t a v f c f = 100 ma 10 ma 1 ma 0.1 ma forward current i f = ( t a *; t s ) 0 20 40 60 80 100 120 c 150 t a , t s 0 50 100 150 ma 250 i f tbd forward current i f = ( v f ) 0 0 ehb00023 bas 16 0.5 1.0 v 1.5 50 100 ma 150 f f v max typ
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